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 JMnic
Product Specification
Silicon PNP Power Transistors
2SA940
DESCRIPTION With TO-220 package Complement to type 2SC2073
APPLICATIONS Power amplifier applications Vertical output applications
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base
Absolute maximum ratings (Ta=25ae )
SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Base current Ta=25ae PC Collector power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature 25 150 -55~150 ae ae CONDITIONS Open emitter Open base Open collector VALUE -150 -150 -5 -1.5 -0.5 1.5 W UNIT V V V A A
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter on voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=-0.5A; IB=-50m A IC=-0.5A ; VCE=-10V IC=-1mA; IE=0 IC=-5mA; IB=0 IE=-1mA; IC=0 VCB=-120V;IE=0 VEB=-5V; IC=0 IC=-0.5A ; VCE=-10V IE=0; VCB=-10V;f=1MHz IC=-0.5A ; VCE=-10V 40 55 4 -150 -150 -5 -0.75 MIN TYP.
2SA940
SYMBOL VCEsat VBE V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE COB fT
MAX -1.5 -0.85
UNIT V V V V V
-10 -10 140
|I |I
A A
pF MHz
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA940
Fig.2 outline dimensions (unindicated tolerance:A
0.10 mm)
3
JMnic
Product Specification
Silicon PNP Power Transistors
2SA940
4


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